| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| MW6IC2420NBR1 |
RF LDMOS Integrated Power Amplifier
|
Freescale Semiconductor, Inc
|
| MHVIC2115NR2 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor
|
| MD8IC970N |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
|
| MHW1910D |
MHW1910-1 1930-1990 MHz, 10 W RF Power LDMOS Amplifier - Archived
|
Motorola
|
| PTMA080152M |
Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 ?1000 MHz
|
Infineon Technologies AG
|
| PTMA080152 PTMA080152M |
Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 ?1000 MHz
|
Cree, Inc
|
